technical data npn darlington power silicon transistor qualified per mil - prf - 19500/472 devices qualified level 2n6350 2n6351 2n6352 2n6353 jan jantx jantxv maximum ratings ratings symbol 2n6350 2n6352 2n6351 2n6353 units collector - emitter voltage v cer 80 150 vdc collector - base voltage v cbo 80 150 vdc emitter - base voltage v ebo 12 6.0 vdc vdc base current i b 0.5 adc collector current i c 5.0 10 (1) adc adc 2n6350 2n6351 2n6352 2n6353 total power dissipation @ t a = 25 0 c @ t c = 100 0 c p t 1.0 (2) 5.0 (3) 2.0 (4) 25 (5) w w operating & storage junction temperature range t j , t stg - 65 to +200 0 c thermal characteristics characteristics symbol 2n6350 2n6351 2n6352 2n6353 unit thermal resistance, juncti on - to - case r q jc 20 4.0 0 c/w 1) applies for t p 10 ms, duty cycle 50% 2) derate linearly @ 5.72 mw/ 0 c above t a > 25 0 c 3) derate linearly @ 50 mw/ 0 c above t c > 100 0 c 4) derate linearly @ 11.4 mw/ 0 c above t a > 25 0 c 5) derate linearly @ 250 mw/ 0 c above t c > 100 0 c 2n6350, 2n6351 to - 33 * 2n6352, 2n6353 to - 24 * (to - 213aa) *see appendix a for package outline electrical characteristics (t c = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = 25 madc, r b1e = 2.2 k w , r b2e = 100 w 2n6350, 2n6352 2n6351, 2n6353 v (br) cer 80 150 vdc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2
2n6350, 2n6351, 2n6352, 2n6353 jan series electr ical characteristics (con?t) characteristics symbol min. max. unit emitter - base breakdown voltage i eb = 12 madc, base 1 open i eb = 12 madc, base 2 open v (br) ebo 6.0 12 vdc collector - emitter cutoff current v eb1 = 2.0 vdc, r b2e = 100 w , v ce = 80 vdc 2n6350, 2n6352 v eb1 = 2.0 vdc, r b2e = 100 w , v ce = 150 vdc 2n6351, 2n6353 i cex 1.0 1.0 m adc on characteristics (6) forward - current transfer ratio i c = 1.0 adc, v ce = 5.0 vdc, r b2e = 1.0 w 2n6350, 2n6352 i c = 5.0 adc, v ce = 5.0 vdc, r b2e = 100 w i c = 10 adc, v ce = 5.0 vdc, r b2e = 100 w i c = 1.0 adc, v ce = 5.0 vdc, r b2e = 1.0 w 2n6351, 2n6353 i c = 5.0 adc, v ce = 5.0 vdc, r b2e = 100 w i c = 10 adc, v ce = 5.0 vdc, r b2e = 100 w h fe 2,000 2,000 400 1,000 1,00 0 200 10,000 10,000 collector - emitter saturation voltage i c = 5.0 adc, r b2e = 100 w , i b1 = 5.0 madc 2n6350, 2n6352 i c = 5.0 adc, r b2e = 100 w , i b1 = 10 madc 2n6351, 2n6353 v ce(sat) 1.5 2.5 vdc base - emitter voltage i c = 5.0 adc, v ce = 5.0 vdc, r b2e = 100 w v be1(on) 2.5 vdc dynamic characteristics magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = 1.0 adc, v ce = 10 vdc, r b2e = 100 w ; f = 10 mhz ? h fe ? 5.0 25 output capacitance v cb1 = 10 vdc, 100 khz f 1.0 mhz, base 2 open c obo 120 pf switching characteristics turn - on time v cc = 30 vdc; i c = 5.0 adc (see fig 4 for 2n6350, 2n6352) (see fig 5 for 2n6350, 2n6352) t on 0.5 m s turn - off time v cc = 30 vdc; i c = 5.0 adc (see fig 4 for 2n6350, 2n6352) (see fig 5 for 2n6350, 2n6352) t off 1.2 m s safe operating area dc tes ts t c = +100 0 c, 1 cycle, t 3 1.0 s, t r + t f = 10 m s, r b2e = 100 w (see fig 6 for 2n6350, 2n6351) test 1 v ce = 1.5vdc, i c = 3.3 adc 2n6350, 2n6351 test 2 v ce = 30 vdc, i c = 167 madc 2n6350, 2n6351 test 3 v ce = 80 vdc, i c = 35 madc 2n6350 test 4 v ce = 150 vdc, i c = 13 madc 2n6351 t c = +100 0 c, 1 cycle, t 3 3 1.0 s, t r + t f = 10 m m s, r b2e = 100 w w (see fig 7 for 2n6352, 2n6353) test 1 v ce = 5.0vdc, i c = 5.0 adc 2n6352, 2n6353 test 2 v ce = 10 vdc, i c = 2.5 adc 2n6352, 2n6353 test 3 v ce = 80 vdc, i c = 95 madc 2n6352 test 4 v ce = 150 vdc, i c = 35 madc 2n6353 (6) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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